Assignee
TOBA RYUICHI
JP3 patents
Top patents by PatentIndex Score
US8963290B2Feb 24, 2015
Semiconductor device and manufacturing method therefor
TOBA RYUICHI1 citations47
US8736025B2May 27, 2014
III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity
TOBA RYUICHI0 citations47
US8878189B2Nov 4, 2014
Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same
TOBA RYUICHI0 citations36