Assignee
TRENTZSCH MARTIN
DE·2 granted patents·1 pending application·5 citations·filing 2008–2010
Top patents by PatentIndex Score
3 records- 0178US8119461B2Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2010·Granted Feb 21, 2012·5 cites·3 claims
- 0252US8158065B2In situ monitoring of metal contamination during microstructure processingTRENTZSCH MARTIN·Filed 2009·Granted Apr 17, 2012·0 cites·18 claims
- 0346US2009170339A1Reducing the creation of charge traps at gate dielectrics in mos transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2008·Application pending·0 cites
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