Assignee
UEMURA TOSHIYA
JP5 patents
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Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
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Group III nitride-based compound semiconductor light-emitting device
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Method for producing group III nitride compound semiconductor element
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Method for producing group III nitride semiconductor light-emitting device
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Group III nitride semiconductor light-emitting device and method for producing the same
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