Assignee
UNITED SILICON CARBIDE INC
US·28 granted patents·6 pending applications·262 citations·filing 2002–2023
Top patents by PatentIndex Score
34 records- 0197US9083343B1Cascode switching circuitUNITED SILICON CARBIDE INC·Filed 2014·Granted Jul 14, 2015·68 cites·28 claims
- 0295US9324807B1Silicon carbide MOSFET with integrated MOS diodeUNITED SILICON CARBIDE INC·Filed 2015·Granted Apr 26, 2016·25 cites·30 claims
- 0395US9190993B1High voltage switchUNITED SILICON CARBIDE INC·Filed 2015·Granted Nov 17, 2015·56 cites·4 claims
- 0490US9716057B1Offset leadframe cascode packageUNITED SILICON CARBIDE INC·Filed 2016·Granted Jul 25, 2017·7 cites·5 claims
- 0589US11211373B1Double-sided chip stack assemblyUNITED SILICON CARBIDE INC·Filed 2021·Granted Dec 28, 2021·5 cites·20 claims
- 0687US12334917B2Voltage-source gate drive having shunt capacitors and shunt resistorsUNITED SILICON CARBIDE INC·Filed 2023·Granted Jun 17, 2025·1 cites·20 claims
- 0786US10825733B2Reusable wide bandgap semiconductor substrateUNITED SILICON CARBIDE INC·Filed 2018·Granted Nov 3, 2020·4 cites·20 claims
- 0886US8004806B2Solid-state disconnect deviceUNITED SILICON CARBIDE INC·Filed 2009·Granted Aug 23, 2011·20 cites·26 claims
- 0985US9866213B1High voltage switch moduleUNITED SILICON CARBIDE INC·Filed 2016·Granted Jan 9, 2018·5 cites·20 claims
- 1083US6841812B2Double-gated vertical junction field effect power transistorUNITED SILICON CARBIDE INC·Filed 2002·Granted Jan 11, 2005·36 cites·8 claims
- 1182US10673396B1Series-connected FETs in active linear modeUNITED SILICON CARBIDE INC·Filed 2019·Granted Jun 2, 2020·5 cites·20 claims
- 1281US9312847B1High voltage switchUNITED SILICON CARBIDE INC·Filed 2015·Granted Apr 12, 2016·4 cites·5 claims
- 1381US9087911B2Trench shield connected JFETUNITED SILICON CARBIDE INC·Filed 2014·Granted Jul 21, 2015·7 cites·23 claims
- 1481US8860098B2Vjfet devicesUNITED SILICON CARBIDE INC·Filed 2014·Granted Oct 14, 2014·7 cites·20 claims
- 1579US10056500B2Vertical JFET made using a reduced mask setUNITED SILICON CARBIDE INC·Filed 2016·Granted Aug 21, 2018·2 cites·11 claims
- 1674US9721944B2Hybrid wide-bandgap semiconductor bipolar switchesUNITED SILICON CARBIDE INC·Filed 2015·Granted Aug 1, 2017·2 cites·8 claims
- 1773US10367098B2Vertical JFET made using a reduced masked setUNITED SILICON CARBIDE INC·Filed 2018·Granted Jul 30, 2019·1 cites·20 claims
- 1873US9325306B1High voltage switchUNITED SILICON CARBIDE INC·Filed 2015·Granted Apr 26, 2016·2 cites·5 claims
- 1972US10396215B2Trench vertical JFET with improved threshold voltage controlUNITED SILICON CARBIDE INC·Filed 2016·Granted Aug 27, 2019·2 cites·12 claims
- 2072US10367099B2Trench vertical JFET with ladder terminationUNITED SILICON CARBIDE INC·Filed 2018·Granted Jul 30, 2019·1 cites·20 claims
- 2170US10446695B2Planar multi-implanted JFETUNITED SILICON CARBIDE INC·Filed 2017·Granted Oct 15, 2019·1 cites·10 claims
- 2264US10147813B2Tunneling field effect transistorUNITED SILICON CARBIDE INC·Filed 2017·Granted Dec 4, 2018·1 cites·21 claims
- 2360US11710662B2Reusable wide bandgap semiconductor substrateUNITED SILICON CARBIDE INC·Filed 2020·Granted Jul 25, 2023·0 cites·18 claims
- 2454US9331068B2Hybrid wide-bandgap semiconductor bipolar switchesUNITED SILICON CARBIDE INC·Filed 2014·Granted May 3, 2016·0 cites·8 claims
- 2552US10121907B2Planar triple-implanted JFETUNITED SILICON CARBIDE INC·Filed 2016·Granted Nov 6, 2018·0 cites·8 claims
- 2650US10050154B2Trench vertical JFET with ladder terminationUNITED SILICON CARBIDE INC·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 2748US9653618B1Planar triple-implanted JFETUNITED SILICON CARBIDE INC·Filed 2015·Granted May 16, 2017·0 cites·8 claims
- 2848US2017018657A1Vertical jfet made using a reduced mask setUNITED SILICON CARBIDE INC·Filed 2015·Application pending·0 cites
- 2945US2016336432A1Trench vertical jfet with improved threshold voltage controlUNITED SILICON CARBIDE INC·Filed 2016·Application pending·0 cites
- 3043US2016268446A1Trench vertical jfet with improved threshold voltage controlUNITED SILICON CARBIDE INC·Filed 2015·Application pending·0 cites
- 3141US2018102326A1Perimeter Control Of Crack Propagation In Semiconductor WafersUNITED SILICON CARBIDE INC·Filed 2017·Application pending·0 cites
- 3236US2017125394A1Wide Bandgap Junction Barrier Schottky Diode With Silicon BypassUNITED SILICON CARBIDE INC·Filed 2016·Application pending·0 cites
- 3334US9917180B2Trenched and implanted bipolar junction transistorUNITED SILICON CARBIDE INC·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 3433US2017213908A1Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the sameUNITED SILICON CARBIDE INC·Filed 2015·Application pending·0 cites
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