Assignee
URAKAMI YASUSHI
JP·3 granted patents·3 citations·filing 2011–2011
Top patents by PatentIndex Score
3 records- 0167US8936682B2Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defectsURAKAMI YASUSHI·Filed 2011·Granted Jan 20, 2015·3 cites·18 claims
- 0245US9145622B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Sep 29, 2015·0 cites·13 claims
- 0336US9051663B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Jun 9, 2015·0 cites·14 claims
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