Assignee

VANGAURD INTERNATIONAL SEMICON

TW·2 granted patents·140 citations·filing 1996–1998

Technology mixH10B2

Top patents by PatentIndex Score

2 records

0189US5879986AMethod for fabrication of a one gigabit capacitor over bit line DRAM cell with an area equal to eight times the used minimum featureVANGAURD INTERNATIONAL SEMICON·Filed 1998·Granted Mar 9, 1999·76 cites·22 claims
0287US5706164AMethod of fabricating high density integrated circuits, containing stacked capacitor DRAM devices, using elevated trench isolation and isolation spacersVANGAURD INTERNATIONAL SEMICON·Filed 1996·Granted Jan 6, 1998·64 cites·29 claims

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