Assignee
WANG YUNYU
US·2 granted patents·373 citations·filing 2012–2012
Top patents by PatentIndex Score
2 records- 0198US8679983B2Selective suppression of dry-etch rate of materials containing both silicon and nitrogenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·184 cites·20 claims
- 0298US8679982B2Selective suppression of dry-etch rate of materials containing both silicon and oxygenWANG YUNYU·Filed 2012·Granted Mar 25, 2014·189 cites·20 claims
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