Assignee
WATANABE TOMOKATSU
JP·2 granted patents·1 citations·filing 2008–2012
Top patents by PatentIndex Score
2 records- 0156US8252672B2Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the sameWATANABE TOMOKATSU·Filed 2008·Granted Aug 28, 2012·1 cites·6 claims
- 0234US9076761B2Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor deviceWATANABE TOMOKATSU·Filed 2012·Granted Jul 7, 2015·0 cites·9 claims
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