Assignee
WORLDWIDE SEMICONDUCTOR MANUFA
TW·44 granted patents·1,244 citations·filing 1997–1999
Top patents by PatentIndex Score
44 records- 0196US6110837AMethod for forming a hard mask of half critical dimensionWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 29, 2000·240 cites·16 claims
- 0288US6022776AMethod of using silicon oxynitride to improve fabricating of DRAM contacts and landing padsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Feb 8, 2000·60 cites·3 claims
- 0386US6096603AMethod of fabricating a split gate structure of a flash memoryWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 1, 2000·78 cites·23 claims
- 0486US6091101AMulti-level flash memory using triple wellWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jul 18, 2000·57 cites·10 claims
- 0584US6107660AVertical thin film transistorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 22, 2000·63 cites·9 claims
- 0684US6025625ASingle-poly EEPROM cell structure operations and array architectureWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Feb 15, 2000·54 cites·10 claims
- 0782US6100129AMethod for making fin-trench structured DRAM capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 8, 2000·49 cites·8 claims
- 0880US6111286ALow voltage low power n-channel flash memory cell using gate induced drain leakage currentWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 29, 2000·45 cites·3 claims
- 0979US5916823AMethod for making dual damascene contactWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jun 29, 1999·56 cites·11 claims
- 1078US6100138AMethod to fabricate DRAM capacitor using damascene processesWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 8, 2000·42 cites·20 claims
- 1175US6074942AMethod for forming a dual damascene contact and interconnectWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jun 13, 2000·45 cites·13 claims
- 1272US5932487AMethod for forming a planar intermetal dielectric layerWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 3, 1999·38 cites·16 claims
- 1370US6060742AETOX cell having bipolar electron injection for substrate-hot-electron programWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted May 9, 2000·36 cites·7 claims
- 1467US6090679AMethod for forming a crown capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jul 18, 2000·26 cites·15 claims
- 1566US6093590AMethod of fabricating transistor having a metal gate and a gate dielectric layer with a high dielectric constantWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Jul 25, 2000·31 cites·14 claims
- 1665US5973354ASingle polycylindrical flash memory cell having high coupling ratioWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Oct 26, 1999·20 cites·5 claims
- 1762US6026028AHot carrier injection programming and negative gate voltage channel erase flash EEPROM structureWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Feb 15, 2000·23 cites·11 claims
- 1859US6091635AElectron injection method for substrate-hot-electron program and erase VT tightening for ETOX cellWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Jul 18, 2000·17 cites·8 claims
- 1957US6121082AMethod of fabricating DRAM with novel landing pad processWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Sep 19, 2000·25 cites·18 claims
- 2057US6110790AMethod for making a MOSFET with self-aligned source and drain contacts including forming an oxide liner on the gate, forming nitride spacers on the liner, etching the liner, and forming contacts in the gapsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 29, 2000·16 cites·12 claims
- 2155US6116991AInstallation for improving chemical-mechanical polishing operationWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Sep 12, 2000·18 cites·9 claims
- 2254US6100136AMethod of fabricating capacitor capable of maintaining the height of the peripheral area of the capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 8, 2000·15 cites·10 claims
- 2353US6004859AMethod for fabricating a stack capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Dec 21, 1999·14 cites·15 claims
- 2451US6117748ADishing free process for shallow trench isolationWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Sep 12, 2000·17 cites·14 claims
- 2549US6087690ASingle polysilicon DRAM cell with current gainWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jul 11, 2000·9 cites·8 claims
- 2649US6088259ASRAM cell using two single transistor invertersWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Jul 11, 2000·11 cites·4 claims
- 2749US6020265AMethod for forming a planar intermetal dielectric layerWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Feb 1, 2000·14 cites·5 claims
- 2849US6015641AReduction of optical proximity effect of bit line pattern in DRAM devicesWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jan 18, 2000·14 cites·12 claims
- 2948US6399482B1Method and structure for a conductive and a dielectric layerWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Jun 4, 2002·14 cites·27 claims
- 3047US6107139AMethod for making a mushroom shaped DRAM capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 22, 2000·10 cites·17 claims
- 3144US6040603AElectrostatic discharge protection circuit employing MOSFETs having double ESD implantationsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Mar 21, 2000·10 cites·1 claims
- 3243US6060786AAlignment-marker structure and method of forming the same in integrated circuit fabricationWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted May 9, 2000·10 cites·8 claims
- 3343US6022800AMethod of forming barrier layer for tungsten plugs in interlayer dielectricsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Feb 8, 2000·13 cites·10 claims
- 3442US6062955AInstallation for improving chemical-mechanical polishing operationWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted May 16, 2000·10 cites·19 claims
- 3540US6103575AMethod of forming a single poly cylindrical flash memory cell having high coupling ratioWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 15, 2000·5 cites·5 claims
- 3640US5998262AMethod for manufacturing ETOX cell having damage-free source regionWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Dec 7, 1999·5 cites·12 claims
- 3738US6130462AVertical poly load device in 4T SRAM technologyWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Oct 10, 2000·5 cites·7 claims
- 3838US6066875AMethod of fabricating split-gate source side injection flash EEPROM arrayWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted May 23, 2000·5 cites·22 claims
- 3936US6074913AMethod for forming a DRAM capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jun 13, 2000·5 cites·12 claims
- 4034US6096653AMethod for fabricating conducting lines with a high topography heightWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 1, 2000·3 cites·4 claims
- 4134US6043131AMethod for making a flower shaped DRAM capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Mar 28, 2000·5 cites·12 claims
- 4234US5981386AMethod for manufacturing interconnection plugWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1997·Granted Nov 9, 1999·5 cites·19 claims
- 4333US6090664AMethod for making a stacked DRAM capacitorWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jul 18, 2000·3 cites·10 claims
- 4431US6101656AWafer cleaning deviceWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Aug 15, 2000·3 cites·28 claims
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