Assignee
WORLEDGE DANIEL C
US6 patents
Top patents by PatentIndex Score
US8324697B2Dec 4, 2012
Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory
WORLEDGE DANIEL C57 citations98
US8482968B2Jul 9, 2013
Non-volatile magnetic tunnel junction transistor
WORLEDGE DANIEL C21 citations92
US8233249B2Jul 31, 2012
Magnetic tunnel junction transistor device
WORLEDGE DANIEL C15 citations84
US8406040B2Mar 26, 2013
Spin-torque based memory device using a magnesium oxide tunnel barrier
WORLEDGE DANIEL C5 citations73
US8536668B2Sep 17, 2013
Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory
WORLEDGE DANIEL C4 citations63
US8107285B2Jan 31, 2012
Read direction for spin-torque based memory device
WORLEDGE DANIEL C3 citations63