Assignee
WU CHUN-YUAN
TW·4 granted patents·8 citations·filing 2010–2011
Top patents by PatentIndex Score
4 records- 0181US8329547B2Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxideWU CHUN-YUAN·Filed 2010·Granted Dec 11, 2012·5 cites·17 claims
- 0262US8647989B2Method of forming opening on semiconductor substrateWU CHUN-YUAN·Filed 2011·Granted Feb 11, 2014·1 cites·7 claims
- 0361US8551847B2Method for forming metal gateWU CHUN-YUAN·Filed 2011·Granted Oct 8, 2013·1 cites·21 claims
- 0459US8921944B2Semiconductor deviceWU CHUN-YUAN·Filed 2011·Granted Dec 30, 2014·1 cites·21 claims
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