Assignee
XIONG WEIZE
US5 patents
Top patents by PatentIndex Score
US8114727B2Feb 14, 2012
Disposable spacer integration with stress memorization technique and silicon-germanium
XIONG WEIZE10 citations83
US8138035B2Mar 20, 2012
Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
XIONG WEIZE7 citations82
US8470707B2Jun 25, 2013
Silicide method
XIONG WEIZE2 citations61
US8410519B2Apr 2, 2013
Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
XIONG WEIZE1 citations61
US8067792B2Nov 29, 2011
Memory device with memory cell including MuGFET and FIN capacitor
XIONG WEIZE1 citations50