Assignee
XU HUIWEN
US10 patents
Top patents by PatentIndex Score
US8445075B2May 21, 2013
Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
XU HUIWEN517 citations98
US8569730B2Oct 29, 2013
Carbon-based interface layer for a memory device and methods of forming the same
XU HUIWEN8 citations84
US8551855B2Oct 8, 2013
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
XU HUIWEN11 citations84
US8114765B2Feb 14, 2012
Methods for increased array feature density
XU HUIWEN8 citations84
US8093123B2Jan 10, 2012
Integration methods for carbon films in two- and three-dimensional memories formed therefrom
XU HUIWEN6 citations73
US8466044B2Jun 18, 2013
Memory cell that includes a carbon-based memory element and methods forming the same
XU HUIWEN4 citations62
US8481396B2Jul 9, 2013
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
XU HUIWEN2 citations58
US8557685B2Oct 15, 2013
Memory cell that includes a carbon-based memory element and methods of forming the same
XU HUIWEN1 citations52
US8470646B2Jun 25, 2013
Modulation of resistivity in carbon-based read-writeable materials
XU HUIWEN1 citations52
US8309415B2Nov 13, 2012
Methods and apparatus for increasing memory density using diode layer sharing
XU HUIWEN0 citations52