Assignee
XU QIUXIA
CN·11 granted patents·21 citations·filing 2010–2012
Top patents by PatentIndex Score
11 records- 0186US8298927B2Method of adjusting metal gate work function of NMOS deviceXU QIUXIA·Filed 2010·Granted Oct 30, 2012·9 cites·11 claims
- 0277US8258063B2Method for manufacturing a metal gate electrode/high K dielectric gate stackXU QIUXIA·Filed 2010·Granted Sep 4, 2012·4 cites·9 claims
- 0373US8748250B2Method for integration of dual metal gates and dual high-K dielectrics in CMOS devicesXU QIUXIA·Filed 2011·Granted Jun 10, 2014·4 cites·9 claims
- 0466US8334205B2Method for removing polymer after etching gate stack structure of high-K gate dielectric/metal gateXU QIUXIA·Filed 2011·Granted Dec 18, 2012·2 cites·11 claims
- 0564US9049061B2CMOS device and method for manufacturing the sameXU QIUXIA·Filed 2012·Granted Jun 2, 2015·1 cites·6 claims
- 0662US8598002B2Method for manufacturing metal gate stack structure in gate-first processXU QIUXIA·Filed 2011·Granted Dec 3, 2013·1 cites·9 claims
- 0744US8278026B2Method for improving electron-beamXU QIUXIA·Filed 2011·Granted Oct 2, 2012·0 cites·7 claims
- 0842US8338084B2Patterning methodXU QIUXIA·Filed 2010·Granted Dec 25, 2012·0 cites·9 claims
- 0938US8574977B2Method for manufacturing stack structure of PMOS device and adjusting gate work functionXU QIUXIA·Filed 2011·Granted Nov 5, 2013·0 cites·10 claims
- 1037US8822292B2Method for forming and controlling molecular level SiO2 interface layerXU QIUXIA·Filed 2012·Granted Sep 2, 2014·0 cites·13 claims
- 1137US8530302B2Method for manufacturing CMOS FETXU QIUXIA·Filed 2011·Granted Sep 10, 2013·0 cites·10 claims
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