Assignee

YAMABAYASHI TOSHIHARU

JP·1 granted patent·1 citations·filing 2006–2006

Technology mixC01B1 H10F1 Y02E1 Y02P1

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0158US8173094B2Method for producing polycrystalline siliconYAMABAYASHI TOSHIHARU·Filed 2006·Granted May 8, 2012·1 cites·7 claims

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