Assignee
YAN SHIH-GUEI
TW·3 granted patents·0 citations·filing 2010–2011
Top patents by PatentIndex Score
3 records- 0146US8698222B2Memory device with charge storage layers at the gaps located both sides of the gate dielectric underneath the gateYAN SHIH-GUEI·Filed 2011·Granted Apr 15, 2014·0 cites·8 claims
- 0237US8674424B2Memory device with charge storage layers at the sidewalls of the gate and method for fabricating the sameYAN SHIH-GUEI·Filed 2011·Granted Mar 18, 2014·0 cites·9 claims
- 0336US8664709B2Non-volatile memory and fabricating method thereofYAN SHIH-GUEI·Filed 2010·Granted Mar 4, 2014·0 cites·21 claims
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