Assignee
YANG DAEWON
US·2 granted patents·2 pending applications·5 citations·filing 2006–2012
Top patents by PatentIndex Score
4 records- 0179US9080239B2Method and apparatus for angular high density plasma chemical vapor depositionYANG DAEWON·Filed 2012·Granted Jul 14, 2015·4 cites·11 claims
- 0261US9016236B2Method and apparatus for angular high density plasma chemical vapor depositionYANG DAEWON·Filed 2008·Granted Apr 28, 2015·1 cites·2 claims
- 0349US2008146039A1Method to reduce plasma charge damage from high density plasma chemical vapor deposition (hdp-cvd) processYANG DAEWON·Filed 2006·Application pending·0 cites
- 0439US2012027956A1Modification of nitride top layerYANG DAEWON·Filed 2010·Application pending·0 cites
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