Assignee
YAO TAKAFUMI
JP·4 granted patents·3 citations·filing 2006–2011
Top patents by PatentIndex Score
4 records- 0166US8878345B2Structural body and method for manufacturing semiconductor substrateYAO TAKAFUMI·Filed 2011·Granted Nov 4, 2014·2 cites·6 claims
- 0260US8216869B2Group III nitride semiconductor and a manufacturing method thereofYAO TAKAFUMI·Filed 2008·Granted Jul 10, 2012·1 cites·17 claims
- 0348US8124504B2Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based elementYAO TAKAFUMI·Filed 2010·Granted Feb 28, 2012·0 cites·12 claims
- 0442US8119499B2Semiconductor substrate fabrication by etching of a peeling layerYAO TAKAFUMI·Filed 2006·Granted Feb 21, 2012·0 cites·10 claims
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