Assignee
YOKOGAWA TOSHIYA
JP·9 granted patents·3 pending applications·22 citations·filing 2009–2012
Top patents by PatentIndex Score
12 records- 0190US8110851B2Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2011·Granted Feb 7, 2012·9 cites·16 claims
- 0281US8604591B2Nitride-type semiconductor element and process for production thereofYOKOGAWA TOSHIYA·Filed 2012·Granted Dec 10, 2013·3 cites·13 claims
- 0378US8791473B2Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating deviceYOKOGAWA TOSHIYA·Filed 2009·Granted Jul 29, 2014·8 cites·17 claims
- 0466US8785965B2Nitride-based semiconductor light-emitting device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2009·Granted Jul 22, 2014·2 cites·10 claims
- 0554US2011156048A1Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2009·Application pending·0 cites
- 0650US8823026B2Nitride semiconductor light-emitting element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2012·Granted Sep 2, 2014·0 cites·15 claims
- 0748US8729587B2Nitride semiconductor element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2012·Granted May 20, 2014·0 cites·18 claims
- 0845US8933543B2Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and AgYOKOGAWA TOSHIYA·Filed 2011·Granted Jan 13, 2015·0 cites·42 claims
- 0942US8748899B2Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2012·Granted Jun 10, 2014·0 cites·27 claims
- 1040US8729579B2Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting deviceYOKOGAWA TOSHIYA·Filed 2012·Granted May 20, 2014·0 cites·23 claims
- 1138US2012326161A1Nitride semiconductor element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2012·Application pending·0 cites
- 1237US2012091463A1Nitride semiconductor light-emitting element and manufacturing method thereforYOKOGAWA TOSHIYA·Filed 2010·Application pending·0 cites
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