Assignee
YUAN FENG
TW6 patents
Top patents by PatentIndex Score
US9953885B2Apr 24, 2018
STI shape near fin bottom of Si fin in bulk FinFET
YUAN FENG24 citations94
US8519481B2Aug 27, 2013
Voids in STI regions for forming bulk FinFETs
YUAN FENG35 citations94
US8592918B2Nov 26, 2013
Forming inter-device STI regions and intra-device STI regions using different dielectric materials
YUAN FENG8 citations84
US8504909B2Aug 6, 2013
Load-time memory optimization
YUAN FENG4 citations57
US9484462B2Nov 1, 2016
Fin structure of fin field effect transistor
YUAN FENG0 citations52
US8623718B2Jan 7, 2014
Tilt implantation for forming FinFETs
YUAN FENG0 citations52