Assignee
ZHANG QINGCHUN
US·28 granted patents·198 citations·filing 2007–2012
Top patents by PatentIndex Score
28 records- 0197US8415671B2Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesZHANG QINGCHUN·Filed 2010·Granted Apr 9, 2013·36 cites·49 claims
- 0297US8232558B2Junction barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2008·Granted Jul 31, 2012·41 cites·20 claims
- 0394US8653534B2Junction Barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2012·Granted Feb 18, 2014·14 cites·24 claims
- 0493US8211770B2Transistor with A-face conductive channel and trench protecting well regionZHANG QINGCHUN·Filed 2011·Granted Jul 3, 2012·14 cites·30 claims
- 0591US9117739B2Semiconductor devices with heterojunction barrier regions and methods of fabricating sameZHANG QINGCHUN·Filed 2010·Granted Aug 25, 2015·12 cites·24 claims
- 0685US8330244B2Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating sameZHANG QINGCHUN·Filed 2009·Granted Dec 11, 2012·8 cites·20 claims
- 0784US8710510B2High power insulated gate bipolar transistorsZHANG QINGCHUN·Filed 2007·Granted Apr 29, 2014·8 cites·15 claims
- 0884US8541787B2High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capabilityZHANG QINGCHUN·Filed 2009·Granted Sep 24, 2013·10 cites·25 claims
- 0984US8432012B2Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameZHANG QINGCHUN·Filed 2011·Granted Apr 30, 2013·6 cites·12 claims
- 1083US9064710B2Transistor with A-face conductive channel and trench protecting well regionZHANG QINGCHUN·Filed 2012·Granted Jun 23, 2015·5 cites·19 claims
- 1183US8637386B2Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating sameZHANG QINGCHUN·Filed 2010·Granted Jan 28, 2014·5 cites·19 claims
- 1281US8193848B2Power switching devices having controllable surge current capabilitiesZHANG QINGCHUN·Filed 2009·Granted Jun 5, 2012·10 cites·30 claims
- 1378US8460977B2Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structuresZHANG QINGCHUN·Filed 2011·Granted Jun 11, 2013·4 cites·9 claims
- 1475US9171977B2Optically assist-triggered wide bandgap thyristors having positive temperature coefficientsZHANG QINGCHUN·Filed 2012·Granted Oct 27, 2015·3 cites·19 claims
- 1574US8536582B2Stable power devices on low-angle off-cut silicon carbide crystalsZHANG QINGCHUN·Filed 2009·Granted Sep 17, 2013·4 cites·11 claims
- 1673US8097919B2Mesa termination structures for power semiconductor devices including mesa step buffersZHANG QINGCHUN·Filed 2008·Granted Jan 17, 2012·4 cites·17 claims
- 1771US9312343B2Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materialsZHANG QINGCHUN·Filed 2009·Granted Apr 12, 2016·4 cites·41 claims
- 1869US9640609B2Double guard ring edge termination for silicon carbide devicesZHANG QINGCHUN·Filed 2008·Granted May 2, 2017·4 cites·28 claims
- 1969US8835987B2Insulated gate bipolar transistors including current suppressing layersZHANG QINGCHUN·Filed 2007·Granted Sep 16, 2014·3 cites·14 claims
- 2062US8563986B2Power semiconductor devices having selectively doped JFET regions and related methods of forming such devicesZHANG QINGCHUN·Filed 2009·Granted Oct 22, 2013·2 cites·20 claims
- 2157US8294507B2Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuitsZHANG QINGCHUN·Filed 2009·Granted Oct 23, 2012·1 cites·19 claims
- 2248US9478537B2High-gain wide bandgap darlington transistors and related methods of fabricationZHANG QINGCHUN·Filed 2009·Granted Oct 25, 2016·0 cites·26 claims
- 2348US8809904B2Electronic device structure with a semiconductor ledge layer for surface passivationZHANG QINGCHUN·Filed 2010·Granted Aug 19, 2014·0 cites·19 claims
- 2447US9337268B2SiC devices with high blocking voltage terminated by a negative bevelZHANG QINGCHUN·Filed 2011·Granted May 10, 2016·0 cites·29 claims
- 2546US8497552B2Semiconductor devices with current shifting regions and related methodsZHANG QINGCHUN·Filed 2009·Granted Jul 30, 2013·0 cites·34 claims
- 2644US9601605B2Bipolar junction transistor with improved avalanche capabilityZHANG QINGCHUN·Filed 2012·Granted Mar 21, 2017·0 cites·32 claims
- 2743US9318623B2Recessed termination structures and methods of fabricating electronic devices including recessed termination structuresZHANG QINGCHUN·Filed 2011·Granted Apr 19, 2016·0 cites·23 claims
- 2841US8552435B2Electronic device structure including a buffer layer on a base layerZHANG QINGCHUN·Filed 2010·Granted Oct 8, 2013·0 cites·40 claims
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