Assignee

ZHAO MEI

CN·1 granted patent·1 citations·filing 2011–2011

Technology mixH01L1 H10D1 H10P1

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1 record

0154US8860143B2High-K gate dielectric with work function adjustment metal layerZHAO MEI·Filed 2011·Granted Oct 14, 2014·1 cites·5 claims

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