Assignee
ZHAO YUJI
US·4 granted patents·2 pending applications·1 citations·filing 2011–2022
Top patents by PatentIndex Score
6 records- 0180US11495694B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2021·Granted Nov 8, 2022·1 cites·10 claims
- 0269US12159943B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0352US11626483B2Low-leakage regrown GaN p-n junctions for GaN power devicesZHAO YUJI·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 0452US11417529B2Plasma-based edge terminations for gallium nitride power devicesZHAO YUJI·Filed 2020·Granted Aug 16, 2022·0 cites·10 claims
- 0543US2012273796A1High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrateZHAO YUJI·Filed 2012·Application pending·0 cites
- 0637US2012126283A1High power, high efficiency and low efficiency droop iii-nitride light-emitting diodes on semipolar substratesZHAO YUJI·Filed 2011·Application pending·0 cites
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