Assignee
ZHU HUILONG
US·95 granted patents·13 pending applications·382 citations·filing 2006–2016
Top patents by PatentIndex Score
108 records- 0197US8299583B2Two-sided semiconductor structureZHU HUILONG·Filed 2010·Granted Oct 30, 2012·30 cites·20 claims
- 0294US8674449B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·19 cites·13 claims
- 0393US9087691B2Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 21, 2015·14 cites·11 claims
- 0493US8207027B2Triple gate and double gate finFETs with different vertical dimension finsZHU HUILONG·Filed 2009·Granted Jun 26, 2012·21 cites·12 claims
- 0593US8110465B2Field effect transistor having an asymmetric gate electrodeZHU HUILONG·Filed 2007·Granted Feb 7, 2012·19 cites·15 claims
- 0692US8803208B2Method for fabricating contact electrode and semiconductor deviceZHU HUILONG·Filed 2011·Granted Aug 12, 2014·13 cites·8 claims
- 0791US8552477B2FinFET with improved short channel effect and reduced parasitic capacitanceZHU HUILONG·Filed 2010·Granted Oct 8, 2013·11 cites·11 claims
- 0891US8299453B2CMOS transistors with silicon germanium channel and dual embedded stressorsZHU HUILONG·Filed 2010·Granted Oct 30, 2012·14 cites·14 claims
- 0990US8728881B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 20, 2014·11 cites·6 claims
- 1089US8415806B2Semiconductor structure and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Apr 9, 2013·10 cites·14 claims
- 1189US8115254B2Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating sameZHU HUILONG·Filed 2007·Granted Feb 14, 2012·14 cites·15 claims
- 1288US8729638B2Method for making FINFETs and semiconductor structures formed therefromZHU HUILONG·Filed 2011·Granted May 20, 2014·9 cites·8 claims
- 1387US8058157B2FinFET structure with multiply stressed gate electrodeZHU HUILONG·Filed 2009·Granted Nov 15, 2011·11 cites·17 claims
- 1486US8587066B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2012·Granted Nov 19, 2013·7 cites·19 claims
- 1585US8822337B2Two-sided semiconductor structureZHU HUILONG·Filed 2012·Granted Sep 2, 2014·6 cites·20 claims
- 1684US8673704B2FinFET and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Mar 18, 2014·7 cites·10 claims
- 1784US8198153B2Process integration for flash storage element and dual conductor complementary MOSFETsZHU HUILONG·Filed 2010·Granted Jun 12, 2012·6 cites·18 claims
- 1884US8138029B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2010·Granted Mar 20, 2012·6 cites·19 claims
- 1982US8981454B2Non-volatile memory device using finfet and method for manufacturing the sameZHU HUILONG·Filed 2010·Granted Mar 17, 2015·6 cites·11 claims
- 2082US8658507B2MOSFET structure and method of fabricating the same using replacement channel layerZHU HUILONG·Filed 2010·Granted Feb 25, 2014·6 cites·16 claims
- 2182US8497197B2Method for manufacturing a high-performance semiconductor structure with a replacement gate process and a stress memorization techniqueZHU HUILONG·Filed 2010·Granted Jul 30, 2013·5 cites·11 claims
- 2282US8227316B2Method for manufacturing double gate finFET with asymmetric haloZHU HUILONG·Filed 2006·Granted Jul 24, 2012·9 cites·10 claims
- 2381US9496178B2Semiconductor device having fins of different heights and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Nov 15, 2016·6 cites·4 claims
- 2480US8664091B2Method for removing metallic nanotubeZHU HUILONG·Filed 2011·Granted Mar 4, 2014·5 cites·10 claims
- 2578US8299540B2High performance MOSFETZHU HUILONG·Filed 2010·Granted Oct 30, 2012·3 cites·25 claims
- 2677US8673701B2Semiconductor structure and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·4 cites·14 claims
- 2777US8664054B2Method for forming semiconductor structureZHU HUILONG·Filed 2011·Granted Mar 4, 2014·4 cites·12 claims
- 2877US8138497B2Test structure for detecting via contact shorting in shallow trench isolation regionsZHU HUILONG·Filed 2008·Granted Mar 20, 2012·4 cites·4 claims
- 2976US9064849B23D integrated circuit structure, semiconductor device and method of manufacturing sameZHU HUILONG·Filed 2010·Granted Jun 23, 2015·4 cites·16 claims
- 3076US8896062B2Semiconductor device and method for forming the sameZHU HUILONG·Filed 2011·Granted Nov 25, 2014·4 cites·23 claims
- 3176US8878280B2Flash memory device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Nov 4, 2014·4 cites·13 claims
- 3276US8829621B2Semiconductor substrate for manufacturing transistors having back-gates thereonZHU HUILONG·Filed 2011·Granted Sep 9, 2014·4 cites·19 claims
- 3376US8441045B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 14, 2013·3 cites·21 claims
- 3476US8232155B2Structure and method for manufacturing device with a V-shape channel nMOSFETZHU HUILONG·Filed 2011·Granted Jul 31, 2012·3 cites·16 claims
- 3575US9397104B2SRAM cell and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 19, 2016·4 cites·9 claims
- 3675US8933512B2MOSFET and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jan 13, 2015·4 cites·8 claims
- 3775US8598595B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2010·Granted Dec 3, 2013·3 cites·12 claims
- 3875US8541293B2Method of controlled lateral etchingZHU HUILONG·Filed 2011·Granted Sep 24, 2013·3 cites·11 claims
- 3974US8492846B2Stress-generating shallow trench isolation structure having dual compositionZHU HUILONG·Filed 2007·Granted Jul 23, 2013·3 cites·13 claims
- 4074US8076734B2Semiconductor structure including self-aligned deposited gate dielectricZHU HUILONG·Filed 2007·Granted Dec 13, 2011·4 cites·17 claims
- 4173US9064954B2Semiconductor devices and methods for manufacturing the sameZHU HUILONG·Filed 2012·Granted Jun 23, 2015·3 cites·5 claims
- 4273US8466500B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jun 18, 2013·3 cites·12 claims
- 4372US8754503B2Substrate strip plate structure for semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Jun 17, 2014·3 cites·19 claims
- 4472US8610275B2Semiconductor contact structure including a spacer formed within a via and method of manufacturing the sameZHU HUILONG·Filed 2010·Granted Dec 17, 2013·3 cites·17 claims
- 4572US8426920B2MOSFET and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Apr 23, 2013·3 cites·15 claims
- 4671US8742545B2Substrate strip plate structure for semiconductor device and method of manufacturing the sameZHU HUILONG·Filed 2010·Granted Jun 3, 2014·1 cites·31 claims
- 4770US9012272B2MOSFET and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Apr 21, 2015·2 cites·15 claims
- 4869US10128375B2Strained FinFET and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Nov 13, 2018·2 cites·18 claims
- 4968US8729611B2Semiconductor device having a plurality of fins with different heights and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 20, 2014·2 cites·6 claims
- 5068US8541305B23D integrated circuit and method of manufacturing the sameZHU HUILONG·Filed 2010·Granted Sep 24, 2013·2 cites·20 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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