Assignee
ADVANCED POWER TECHNOLOGY
US·21 granted patents·2 pending applications·1,679 citations·filing 1986–2004
Top patents by PatentIndex Score
23 records- 0196US5423183AHydraulic machine with wedge-shaped swashplateADVANCED POWER TECHNOLOGY·Filed 1993·Granted Jun 13, 1995·65 cites·43 claims
- 0295US5801417ASelf-aligned power MOSFET device with recessed gate and sourceADVANCED POWER TECHNOLOGY·Filed 1993·Granted Sep 1, 1998·236 cites·3 claims
- 0395US5283201AHigh density power device fabrication processADVANCED POWER TECHNOLOGY·Filed 1992·Granted Feb 1, 1994·248 cites·20 claims
- 0493US5648283AHigh density power device fabrication process using undercut oxide sidewallsADVANCED POWER TECHNOLOGY·Filed 1994·Granted Jul 15, 1997·167 cites·34 claims
- 0590US4895810AIopographic pattern delineated power mosfet with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1988·Granted Jan 23, 1990·112 cites·48 claims
- 0688US6503786B2Power MOS device with asymmetrical channel structure for enhanced linear operation capabilityADVANCED POWER TECHNOLOGY·Filed 2001·Granted Jan 7, 2003·71 cites·11 claims
- 0788US5262336AIGBT process to produce platinum lifetime controlADVANCED POWER TECHNOLOGY·Filed 1992·Granted Nov 16, 1993·140 cites·84 claims
- 0887US5045903ATopographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1989·Granted Sep 3, 1991·87 cites·16 claims
- 0986US5528058AIGBT device with platinum lifetime control and reduced gawADVANCED POWER TECHNOLOGY·Filed 1994·Granted Jun 18, 1996·111 cites·9 claims
- 1085US5019522AMethod of making topographic pattern delineated power MOSFET with profile tailored recessed sourceADVANCED POWER TECHNOLOGY·Filed 1990·Granted May 28, 1991·103 cites·10 claims
- 1176US6664594B2Power MOS device with asymmetrical channel structure for enhanced linear operation capabilityADVANCED POWER TECHNOLOGY·Filed 2002·Granted Dec 16, 2003·23 cites·19 claims
- 1273US5250904ADevice for predicting imminent failure of a stationary lead acid battery in a float modeADVANCED POWER TECHNOLOGY·Filed 1992·Granted Oct 5, 1993·96 cites·13 claims
- 1372US4748103AMask-surrogate semiconductor process employing dopant protective regionADVANCED POWER TECHNOLOGY·Filed 1986·Granted May 31, 1988·40 cites·11 claims
- 1470US7169634B2Design and fabrication of rugged FREDADVANCED POWER TECHNOLOGY·Filed 2004·Granted Jan 30, 2007·27 cites·15 claims
- 1569US5182234AProfile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygenADVANCED POWER TECHNOLOGY·Filed 1991·Granted Jan 26, 1993·45 cites·23 claims
- 1666US5283202AIGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regionsADVANCED POWER TECHNOLOGY·Filed 1992·Granted Feb 1, 1994·46 cites·8 claims
- 1753US6939743B2Split-gate power module and method for suppressing oscillation thereinADVANCED POWER TECHNOLOGY·Filed 2003·Granted Sep 6, 2005·6 cites·8 claims
- 1852US6911714B2Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substratesADVANCED POWER TECHNOLOGY·Filed 2001·Granted Jun 28, 2005·4 cites·24 claims
- 1952US5089434AMask surrogate semiconductor process employing dopant-opaque regionADVANCED POWER TECHNOLOGY·Filed 1990·Granted Feb 18, 1992·24 cites·14 claims
- 2045US5256583AMask surrogate semiconductor process with polysilicon gate protectionADVANCED POWER TECHNOLOGY·Filed 1992·Granted Oct 26, 1993·17 cites·10 claims
- 2143US5231474ASemiconductor device with doped electrical breakdown control regionADVANCED POWER TECHNOLOGY·Filed 1992·Granted Jul 27, 1993·11 cites·4 claims
- 2240US2005029226A1Plasma etching using dibromomethane additionADVANCED POWER TECHNOLOGY·Filed 2004·Application pending·0 cites
- 2336US2002074585A1Self-aligned power MOSFET with enhanced base regionADVANCED POWER TECHNOLOGY·Filed 2002·Application pending·0 cites
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →