Assignee
AMBERWAVE SYSTEMS CORP
US·82 granted patents·25 pending applications·5,039 citations·filing 2001–2011
Top patents by PatentIndex Score
107 records- 0199US7420201B2Strained-semiconductor-on-insulator device structures with elevated source/drain regionsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 2, 2008·80 cites·25 claims
- 0299US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0399US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0499US6995430B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Feb 7, 2006·485 cites·14 claims
- 0599US6960781B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Nov 1, 2005·223 cites·40 claims
- 0699US6831292B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Dec 14, 2004·361 cites·62 claims
- 0799US6555839B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 29, 2003·259 cites·14 claims
- 0898US7638842B2Lattice-mismatched semiconductor structures on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 29, 2009·81 cites·41 claims
- 0998US7626246B2Solutions for integrated circuit integration of alternative active area materialsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Dec 1, 2009·121 cites·14 claims
- 1098US7335545B2Control of strain in device layers by prevention of relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Feb 26, 2008·118 cites·31 claims
- 1198US7307273B2Control of strain in device layers by selective relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 11, 2007·86 cites·17 claims
- 1298US7122449B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 17, 2006·66 cites·63 claims
- 1398US6593191B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·134 cites·43 claims
- 1497US7504704B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Mar 17, 2009·54 cites·22 claims
- 1597US7217603B2Methods of forming reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 15, 2007·41 cites·42 claims
- 1697US7049627B2Semiconductor heterostructures and related methodsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 23, 2006·102 cites·21 claims
- 1797US6900094B2Method of selective removal of SiGe alloysAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 31, 2005·130 cites·13 claims
- 1897US6703688B1Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Mar 9, 2004·131 cites·19 claims
- 1997US6680495B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 20, 2004·81 cites·57 claims
- 2097US6677655B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 13, 2004·111 cites·58 claims
- 2197US6583015B2Gate technology for strained surface channel and strained buried channel MOSFET devicesAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 24, 2003·152 cites·25 claims
- 2296US6703144B2Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Mar 9, 2004·98 cites·9 claims
- 2396US6677192B1Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 13, 2004·113 cites·34 claims
- 2495US7588994B2Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strainAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 15, 2009·17 cites·24 claims
- 2595US7259388B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 21, 2007·18 cites·18 claims
- 2695US6946371B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Sep 20, 2005·70 cites·35 claims
- 2795US6881632B2Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETSAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Apr 19, 2005·116 cites·16 claims
- 2895US6602613B1Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Aug 5, 2003·82 cites·69 claims
- 2995US6593641B1Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·96 cites·16 claims
- 3095US6503773B2Low threading dislocation density relaxed mismatched epilayers without high temperature growthAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jan 7, 2003·71 cites·24 claims
- 3194US7393733B2Methods of forming hybrid fin field-effect transistor structuresAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Jul 1, 2008·58 cites·9 claims
- 3294US7297612B2Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Nov 20, 2007·16 cites·16 claims
- 3394US6649480B2Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 18, 2003·91 cites·23 claims
- 3494US6646322B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 11, 2003·92 cites·19 claims
- 3594US6645829B2Silicon wafer with embedded optoelectronic material for monolithic OEICAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 11, 2003·67 cites·27 claims
- 3693US7566606B2Methods of fabricating semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Jul 28, 2009·19 cites·16 claims
- 3793US7138310B2Semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Nov 21, 2006·60 cites·13 claims
- 3892US7432139B2Methods for forming dielectrics and metal electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 7, 2008·18 cites·29 claims
- 3992US7256142B2Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Aug 14, 2007·53 cites·34 claims
- 4092US6991972B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 31, 2006·49 cites·50 claims
- 4192US6724008B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 20, 2004·82 cites·34 claims
- 4292US6723661B2Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuitsAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Apr 20, 2004·83 cites·20 claims
- 4391US6518644B2Low threading dislocation density relaxed mismatched epilayers without high temperature growthAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Feb 11, 2003·39 cites·30 claims
- 4490US6982474B2Reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 3, 2006·28 cites·15 claims
- 4588US7071014B2Methods for preserving strained semiconductor substrate layers during CMOS processingAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 4, 2006·27 cites·44 claims
- 4688US6969875B2Buried channel strained silicon FET using a supply layer created through ion implantationAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Nov 29, 2005·33 cites·29 claims
- 4788US6750130B1Heterointegration of materials using deposition and bondingAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 15, 2004·48 cites·39 claims
- 4886US6594293B1Relaxed InxGa1-xAs layers integrated with SiAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·36 cites·36 claims
- 4985US7439164B2Methods of fabricating semiconductor structures having epitaxially grown source and drain elementsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Oct 21, 2008·7 cites·23 claims
- 5085US7060632B2Methods for fabricating strained layers on semiconductor substratesAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jun 13, 2006·27 cites·54 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →