Assignee
APD SEMICONDUCTOR INC
US·10 granted patents·653 citations·filing 2000–2002
Technology mixH10D10
Top patents by PatentIndex Score
10 records- 0195US6448160B1Method of fabricating power rectifier device to vary operating parameters and resulting deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Sep 10, 2002·99 cites·17 claims
- 0294US6399996B1Schottky diode having increased active surface area and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 4, 2002·99 cites·19 claims
- 0393US6498367B1Discrete integrated circuit rectifier deviceAPD SEMICONDUCTOR INC·Filed 2000·Granted Dec 24, 2002·88 cites·7 claims
- 0492US6420225B1Method of fabricating power rectifier deviceAPD SEMICONDUCTOR INC·Filed 2001·Granted Jul 16, 2002·86 cites·20 claims
- 0591US6743703B2Power diode having improved on resistance and breakdown voltageAPD SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·74 cites·7 claims
- 0691US6404033B1Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jun 11, 2002·68 cites·18 claims
- 0789US6426541B2Schottky diode having increased forward current with improved reverse bias characteristics and method of fabricationAPD SEMICONDUCTOR INC·Filed 2000·Granted Jul 30, 2002·55 cites·13 claims
- 0885US6515330B1Power device having vertical current path with enhanced pinch-off for current limitingAPD SEMICONDUCTOR INC·Filed 2002·Granted Feb 4, 2003·40 cites·17 claims
- 0976US6979861B2Power device having reduced reverse bias leakage currentAPD SEMICONDUCTOR INC·Filed 2002·Granted Dec 27, 2005·25 cites·14 claims
- 1071US6537860B2Method of fabricating power VLSI diode devicesAPD SEMICONDUCTOR INC·Filed 2000·Granted Mar 25, 2003·19 cites·19 claims
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