Assignee
ARIMA OPTOELECTRONICS CORP
TW·25 granted patents·7 pending applications·686 citations·filing 1999–2010
Top patents by PatentIndex Score
32 records- 0197US7291874B2Laser dicing apparatus for a gallium arsenide wafer and method thereofARIMA OPTOELECTRONICS CORP·Filed 2005·Granted Nov 6, 2007·32 cites·9 claims
- 0293US6614170B2Light emitting diode with light conversion using scattering optical mediaARIMA OPTOELECTRONICS CORP·Filed 2001·Granted Sep 2, 2003·80 cites·34 claims
- 0393US6395564B1Method for fabricating a light-emitting device with uniform color temperatureARIMA OPTOELECTRONICS CORP·Filed 2001·Granted May 28, 2002·100 cites·16 claims
- 0491US6614060B1Light emitting diodes with asymmetric resonance tunnellingARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Sep 2, 2003·137 cites·8 claims
- 0586US6455870B1Unipolar light emitting devices based on III-nitride semiconductor superlatticesARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Sep 24, 2002·76 cites·7 claims
- 0679US6577661B1Semiconductor laser with lateral light confinement by polygonal surface optical grating resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Jun 10, 2003·16 cites·33 claims
- 0778US6344665B1Electrode structure of compound semiconductor deviceARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Feb 5, 2002·52 cites·2 claims
- 0877US7061026B2High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layerARIMA OPTOELECTRONICS CORP·Filed 2004·Granted Jun 13, 2006·9 cites·18 claims
- 0977US6677903B2Mobile communication device having multiple frequency band antennaARIMA OPTOELECTRONICS CORP·Filed 2001·Granted Jan 13, 2004·50 cites·27 claims
- 1076US7177331B2Laser diode module with a built-in high-frequency modulation ICARIMA OPTOELECTRONICS CORP·Filed 2004·Granted Feb 13, 2007·14 cites·14 claims
- 1172US6687275B2Resonating cavity system for broadly tunable multi-wavelength semiconductor lasersARIMA OPTOELECTRONICS CORP·Filed 2003·Granted Feb 3, 2004·10 cites·12 claims
- 1271US7781755B2Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diodeARIMA OPTOELECTRONICS CORP·Filed 2009·Granted Aug 24, 2010·5 cites·9 claims
- 1370US7704770B2Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diodeARIMA OPTOELECTRONICS CORP·Filed 2006·Granted Apr 27, 2010·5 cites·10 claims
- 1468US7199390B2Window interface layer of a light-emitting diodeARIMA OPTOELECTRONICS CORP·Filed 2006·Granted Apr 3, 2007·7 cites·5 claims
- 1564US6380050B1Method of epitaxially growing a GaN semiconductor layerARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Apr 30, 2002·11 cites·6 claims
- 1659US6753818B2Concealed antenna for mobile communication deviceARIMA OPTOELECTRONICS CORP·Filed 2001·Granted Jun 22, 2004·12 cites·15 claims
- 1758US7677782B2LED flat lampARIMA OPTOELECTRONICS CORP·Filed 2008·Granted Mar 16, 2010·4 cites·4 claims
- 1858US6130445ALED with AlGaInP Bragg layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted Oct 10, 2000·23 cites·4 claims
- 1952US6417522B1Led with alternated strain layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted Jul 9, 2002·17 cites·5 claims
- 2051US6924511B2Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonatorARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Aug 2, 2005·4 cites·17 claims
- 2149US7023892B2Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injectionARIMA OPTOELECTRONICS CORP·Filed 2002·Granted Apr 4, 2006·2 cites·20 claims
- 2245US6396862B1LED with spreading layerARIMA OPTOELECTRONICS CORP·Filed 1999·Granted May 28, 2002·12 cites·11 claims
- 2344US7397182B2Display module using blue-ray or ultraviolet-ray light sourcesARIMA OPTOELECTRONICS CORP·Filed 2005·Granted Jul 8, 2008·0 cites·7 claims
- 2444US6303485B1Method of producing gallium nitride-based III-V Group compound semiconductor deviceARIMA OPTOELECTRONICS CORP·Filed 2000·Granted Oct 16, 2001·3 cites·6 claims
- 2543US7177333B2Laser diode device with an APC inside the capARIMA OPTOELECTRONICS CORP·Filed 2004·Granted Feb 13, 2007·5 cites·3 claims
- 2639US2004086014A1Semiconductor laser having emitting wavelengthARIMA OPTOELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 2738US2011241059A1Led die structure and method for manufacturing the bottom terminal thereofARIMA OPTOELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 2838US2005244992A1Method for manufacturing light emitting diode utilizing metal substrate and metal bonding technology and structure thereofARIMA OPTOELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 2933US2004206963A1Method for manufacturing light emitting diode utilizing transparent substrate and metal bonding technology and structure thereofARIMA OPTOELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 3033US2005072983A1Method for manufacturing light emitting diode utilizing metal substrate and metal bonding technology and structure thereofARIMA OPTOELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 3133US2004004225A1Light emitting diode and manufacturing method thereofARIMA OPTOELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 3230US2004043524A1Method for fabricating light emitting diode with transparent substrateARIMA OPTOELECTRONICS CORP·Filed 2003·Application pending·0 cites
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