Assignee
ARNOLD JOHN C
US·14 granted patents·1 pending application·134 citations·filing 2006–2012
Top patents by PatentIndex Score
15 records- 0196US8298954B1Sidewall image transfer process employing a cap material layer for a metal nitride layerARNOLD JOHN C·Filed 2011·Granted Oct 30, 2012·29 cites·20 claims
- 0296US8119531B1Mask and etch process for pattern assemblyARNOLD JOHN C·Filed 2011·Granted Feb 21, 2012·30 cites·20 claims
- 0395US8916337B2Dual hard mask lithography processARNOLD JOHN C·Filed 2012·Granted Dec 23, 2014·21 cites·25 claims
- 0492US8470711B2Tone inversion with partial underlayer etch for semiconductor device formationARNOLD JOHN C·Filed 2010·Granted Jun 25, 2013·11 cites·12 claims
- 0589US8470706B2Methods to mitigate plasma damage in organosilicate dielectricsARNOLD JOHN C·Filed 2012·Granted Jun 25, 2013·8 cites·15 claims
- 0686US8084329B2Transistor devices and methods of makingARNOLD JOHN C·Filed 2010·Granted Dec 27, 2011·8 cites·13 claims
- 0784US8481423B2Methods to mitigate plasma damage in organosilicate dielectricsARNOLD JOHN C·Filed 2007·Granted Jul 9, 2013·8 cites·20 claims
- 0881US8129843B2Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacerARNOLD JOHN C·Filed 2010·Granted Mar 6, 2012·5 cites·5 claims
- 0979US8586482B2Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formationARNOLD JOHN C·Filed 2011·Granted Nov 19, 2013·4 cites·20 claims
- 1078US8735283B2Method for forming small dimension openings in the organic masking layer of tri-layer lithographyARNOLD JOHN C·Filed 2011·Granted May 27, 2014·4 cites·33 claims
- 1178US8580692B2Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formationARNOLD JOHN C·Filed 2011·Granted Nov 12, 2013·4 cites·18 claims
- 1272US8536031B2Method of fabricating dual damascene structures using a multilevel multiple exposure patterning schemeARNOLD JOHN C·Filed 2010·Granted Sep 17, 2013·2 cites·11 claims
- 1349US2007252127A1Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereofARNOLD JOHN C·Filed 2006·Application pending·0 cites
- 1448US8536630B2Transistor devices and methods of makingARNOLD JOHN C·Filed 2011·Granted Sep 17, 2013·0 cites·3 claims
- 1541US8448103B2Manufacturing features of different depth by placement of viasARNOLD JOHN C·Filed 2011·Granted May 21, 2013·0 cites·20 claims
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