Assignee
ASML MASKTOOLS BV
NL·82 granted patents·2,604 citations·filing 1998–2011
Top patents by PatentIndex Score
82 records- 0198US7175940B2Method of two dimensional feature model calibration and optimizationASML MASKTOOLS BV·Filed 2002·Granted Feb 13, 2007·365 cites·20 claims
- 0298US6792591B2Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programsASML MASKTOOLS BV·Filed 2002·Granted Sep 14, 2004·160 cites·26 claims
- 0397US6541167B2Optical proximity correctionASML MASKTOOLS BV·Filed 2001·Granted Apr 1, 2003·75 cites·14 claims
- 0496US7242459B2Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition modelASML MASKTOOLS BV·Filed 2005·Granted Jul 10, 2007·31 cites·15 claims
- 0596US6881523B2Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist featuresASML MASKTOOLS BV·Filed 2002·Granted Apr 19, 2005·121 cites·23 claims
- 0696US6114071AMethod of fine feature edge tuning with optically-halftoned maskASML MASKTOOLS BV·Filed 1998·Granted Sep 5, 2000·285 cites·9 claims
- 0795US7620930B2Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithographyASML MASKTOOLS BV·Filed 2005·Granted Nov 17, 2009·20 cites·15 claims
- 0895US7342646B2Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition modelASML MASKTOOLS BV·Filed 2005·Granted Mar 11, 2008·27 cites·12 claims
- 0995US6335130B1System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent featuresASML MASKTOOLS BV·Filed 2000·Granted Jan 1, 2002·65 cites·10 claims
- 1094US7864301B2Source and mask optimization by changing intensity and shape of the illumination sourceASML MASKTOOLS BV·Filed 2008·Granted Jan 4, 2011·19 cites·18 claims
- 1194US6753954B2Method and apparatus for detecting aberrations in a projection lens utilized for projection opticsASML MASKTOOLS BV·Filed 2000·Granted Jun 22, 2004·59 cites·41 claims
- 1294US6670081B2Optical proximity correction method utilizing serifs having variable dimensionsASML MASKTOOLS BV·Filed 2001·Granted Dec 30, 2003·61 cites·13 claims
- 1394US6553562B2Method and apparatus for generating masks utilized in conjunction with dipole illumination techniquesASML MASKTOOLS BV·Filed 2001·Granted Apr 22, 2003·258 cites·28 claims
- 1493US8050898B2Method, program product and apparatus for predicting line width roughness and resist pattern failure and the use thereof in a lithography simulation processASML MASKTOOLS BV·Filed 2007·Granted Nov 1, 2011·29 cites·9 claims
- 1593US7493589B2Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure processASML MASKTOOLS BV·Filed 2006·Granted Feb 17, 2009·14 cites·14 claims
- 1693US7247574B2Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithographyASML MASKTOOLS BV·Filed 2004·Granted Jul 24, 2007·47 cites·22 claims
- 1793US6738859B2Method and apparatus for fast aerial image simulationASML MASKTOOLS BV·Filed 2001·Granted May 18, 2004·82 cites·17 claims
- 1892US6788400B2Method and apparatus for detecting aberrations in an optical systemASML MASKTOOLS BV·Filed 2001·Granted Sep 7, 2004·45 cites·21 claims
- 1992US6623895B2Hybrid phase-shift maskASML MASKTOOLS BV·Filed 2001·Granted Sep 23, 2003·38 cites·23 claims
- 2091US7725872B2Orientation dependent shielding for use with dipole illumination techniquesASML MASKTOOLS BV·Filed 2007·Granted May 25, 2010·13 cites·18 claims
- 2191US6519760B2Method and apparatus for minimizing optical proximity effectsASML MASKTOOLS BV·Filed 2001·Granted Feb 11, 2003·61 cites·13 claims
- 2290US7981576B2Method and apparatus for performing dark field double dipole lithography (DDL)ASML MASKTOOLS BV·Filed 2010·Granted Jul 19, 2011·5 cites·7 claims
- 2390US7824826B2Method and apparatus for performing dark field double dipole lithography (DDL)ASML MASKTOOLS BV·Filed 2007·Granted Nov 2, 2010·9 cites·15 claims
- 2490US7820341B2Method of two dimensional feature model calibration and optimizationASML MASKTOOLS BV·Filed 2007·Granted Oct 26, 2010·12 cites·24 claims
- 2590US7652758B2Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systemsASML MASKTOOLS BV·Filed 2006·Granted Jan 26, 2010·11 cites·18 claims
- 2690US7138212B2Method and apparatus for performing model-based layout conversion for use with dipole illuminationASML MASKTOOLS BV·Filed 2003·Granted Nov 21, 2006·39 cites·21 claims
- 2789US7523438B2Method for improved lithographic patterning utilizing optimized illumination conditions and high transmission attenuated PSMASML MASKTOOLS BV·Filed 2005·Granted Apr 21, 2009·15 cites·10 claims
- 2889US7494753B2Method, program product and apparatus for improving calibration of resist models used in critical dimension calculationASML MASKTOOLS BV·Filed 2006·Granted Feb 24, 2009·14 cites·15 claims
- 2989US7355681B2Optical proximity correction using chamfers and rounding at cornersASML MASKTOOLS BV·Filed 2005·Granted Apr 8, 2008·10 cites·16 claims
- 3089US7246342B2Orientation dependent shielding for use with dipole illumination techniquesASML MASKTOOLS BV·Filed 2003·Granted Jul 17, 2007·33 cites·26 claims
- 3189US6851103B2Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithographyASML MASKTOOLS BV·Filed 2003·Granted Feb 1, 2005·44 cites·18 claims
- 3288US7681171B2Method, program product and apparatus for performing double exposure lithographyASML MASKTOOLS BV·Filed 2006·Granted Mar 16, 2010·14 cites·23 claims
- 3388US7666554B2Method and apparatus for performing model-based layout conversion for use with dipole illuminationASML MASKTOOLS BV·Filed 2006·Granted Feb 23, 2010·11 cites·18 claims
- 3488US7440082B2Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated eigen decomposition modelASML MASKTOOLS BV·Filed 2007·Granted Oct 21, 2008·8 cites·15 claims
- 3587US7865865B2Method, program product and apparatus for performing decomposition of a pattern for use in a DPT processASML MASKTOOLS BV·Filed 2007·Granted Jan 4, 2011·7 cites·18 claims
- 3687US7774736B2Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithographyASML MASKTOOLS BV·Filed 2007·Granted Aug 10, 2010·8 cites·20 claims
- 3787US7349066B2Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influenceASML MASKTOOLS BV·Filed 2005·Granted Mar 25, 2008·9 cites·21 claims
- 3887US7231629B2Feature optimization using enhanced interference mapping lithographyASML MASKTOOLS BV·Filed 2004·Granted Jun 12, 2007·27 cites·27 claims
- 3987US7116411B2Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systemsASML MASKTOOLS BV·Filed 2004·Granted Oct 3, 2006·27 cites·6 claims
- 4086US7550235B2Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithographyASML MASKTOOLS BV·Filed 2004·Granted Jun 23, 2009·25 cites·12 claims
- 4185US6915505B2Method and apparatus for performing rule-based gate shrink utilizing dipole illuminationASML MASKTOOLS BV·Filed 2003·Granted Jul 5, 2005·34 cites·23 claims
- 4284US7639864B2Method, program product and apparatus for optimizing illumination for full-chip layerASML MASKTOOLS BV·Filed 2006·Granted Dec 29, 2009·7 cites·31 claims
- 4384US7617476B2Method for performing pattern pitch-split decomposition utilizing anchoring featuresASML MASKTOOLS BV·Filed 2007·Granted Nov 10, 2009·7 cites·20 claims
- 4484US7355673B2Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layoutASML MASKTOOLS BV·Filed 2004·Granted Apr 8, 2008·25 cites·11 claims
- 4583US7892707B2Scattering bar OPC application method for sub-half wavelength lithography patterningASML MASKTOOLS BV·Filed 2009·Granted Feb 22, 2011·4 cites·26 claims
- 4683USRE40084EOptical proximity correctionASML MASKTOOLS BV·Filed 2005·Granted Feb 19, 2008·6 cites·31 claims
- 4783US7292315B2Optimized polarization illuminationASML MASKTOOLS BV·Filed 2004·Granted Nov 6, 2007·17 cites·16 claims
- 4883US6482555B2Method of patterning sub-0.25λ line features with high transmission, “attenuated” phase shift masksASML MASKTOOLS BV·Filed 2001·Granted Nov 19, 2002·21 cites·28 claims
- 4982US7594199B2Method of optical proximity correction design for contact hole maskASML MASKTOOLS BV·Filed 2004·Granted Sep 22, 2009·22 cites·13 claims
- 5082US7485396B2Scattering bar OPC application method for sub-half wavelength lithography patterningASML MASKTOOLS BV·Filed 2008·Granted Feb 3, 2009·4 cites·12 claims
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