Assignee
CAMBRIDGE ELECTRONICS INC
US·12 granted patents·4 pending applications·66 citations·filing 2014–2021
Top patents by PatentIndex Score
16 records- 0196US9911817B2Field-plate structures for semiconductor devicesCAMBRIDGE ELECTRONICS INC·Filed 2016·Granted Mar 6, 2018·24 cites·18 claims
- 0292US9536984B2Semiconductor structure with a spacer layerCAMBRIDGE ELECTRONICS INC·Filed 2016·Granted Jan 3, 2017·11 cites·20 claims
- 0391US9887268B2Capacitively-coupled field-plate structures for semiconductor devicesCAMBRIDGE ELECTRONICS INC·Filed 2017·Granted Feb 6, 2018·7 cites·19 claims
- 0487US9614069B1III-Nitride semiconductors with recess regions and methods of manufactureCAMBRIDGE ELECTRONICS INC·Filed 2016·Granted Apr 4, 2017·5 cites·20 claims
- 0586US9754937B1Hybrid structure with separate controlsCAMBRIDGE ELECTRONICS INC·Filed 2017·Granted Sep 5, 2017·5 cites·11 claims
- 0683US10566192B2Transistor structure having buried island regionsCAMBRIDGE ELECTRONICS INC·Filed 2015·Granted Feb 18, 2020·4 cites·9 claims
- 0781US11695052B2III-Nitride transistor with a cap layer for RF operationCAMBRIDGE ELECTRONICS INC·Filed 2021·Granted Jul 4, 2023·2 cites·27 claims
- 0878US9502535B2Semiconductor structure and etch technique for monolithic integration of III-N transistorsCAMBRIDGE ELECTRONICS INC·Filed 2016·Granted Nov 22, 2016·3 cites·18 claims
- 0978US9455342B2Electric field management for a group III-nitride semiconductor deviceCAMBRIDGE ELECTRONICS INC·Filed 2014·Granted Sep 27, 2016·4 cites·22 claims
- 1074US11876130B2III-nitride transistor with a modified drain access regionCAMBRIDGE ELECTRONICS INC·Filed 2020·Granted Jan 16, 2024·1 cites·18 claims
- 1151US12080807B2III-nitride diode with a modified access regionCAMBRIDGE ELECTRONICS INC·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 1250US11349003B2Transistor structure with a stress layerCAMBRIDGE ELECTRONICS INC·Filed 2020·Granted May 31, 2022·0 cites·12 claims
- 1350US2022216304A1Iii-nitride transistor with non-uniform channel regionsCAMBRIDGE ELECTRONICS INC·Filed 2021·Application pending·0 cites
- 1448US2016365437A1Electric field management for a group iii-nitride semiconductor deviceCAMBRIDGE ELECTRONICS INC·Filed 2016·Application pending·0 cites
- 1545US2020357905A1Iii-nitride transistor device with a thin barrierCAMBRIDGE ELECTRONICS INC·Filed 2020·Application pending·0 cites
- 1633US2015349064A1Nucleation and buffer layers for group iii-nitride based semiconductor devicesCAMBRIDGE ELECTRONICS INC·Filed 2015·Application pending·0 cites
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