Assignee
CHANG LELAND
US·34 granted patents·2 pending applications·561 citations·filing 2006–2012
Top patents by PatentIndex Score
36 records- 0199US8059438B2Content addressable memory array programmed to perform logic operationsCHANG LELAND·Filed 2009·Granted Nov 15, 2011·416 cites·17 claims
- 0296US8493093B1Time division multiplexed limited switch dynamic logicCHANG LELAND·Filed 2012·Granted Jul 23, 2013·14 cites·20 claims
- 0391US8080838B2Contact scheme for FINFET structures with multiple FINsCHANG LELAND·Filed 2009·Granted Dec 20, 2011·18 cites·18 claims
- 0489US9118242B2Slab inductor device providing efficient on-chip supply voltage conversion and regulationCHANG LELAND·Filed 2012·Granted Aug 25, 2015·6 cites·23 claims
- 0589US8216907B2Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitanceCHANG LELAND·Filed 2010·Granted Jul 10, 2012·8 cites·13 claims
- 0687US8629705B2Low voltage signalingCHANG LELAND·Filed 2010·Granted Jan 14, 2014·9 cites·21 claims
- 0786US8687398B2Sense scheme for phase change material content addressable memoryCHANG LELAND·Filed 2012·Granted Apr 1, 2014·10 cites·19 claims
- 0885US8604832B1Time division multiplexed limited switch dynamic logicCHANG LELAND·Filed 2012·Granted Dec 10, 2013·4 cites·20 claims
- 0983US8261138B2Test structure for characterizing multi-port static random access memory and register file arraysCHANG LELAND·Filed 2006·Granted Sep 4, 2012·12 cites·12 claims
- 1082US8892487B2Electronic synapses for reinforcement learningCHANG LELAND·Filed 2010·Granted Nov 18, 2014·14 cites·25 claims
- 1182US8309445B2Bi-directional self-aligned FET capacitorCHANG LELAND·Filed 2009·Granted Nov 13, 2012·6 cites·6 claims
- 1281US8193062B2Asymmetric silicon-on-insulator SRAM cellCHANG LELAND·Filed 2009·Granted Jun 5, 2012·7 cites·4 claims
- 1380US9124173B2Slab inductor device providing efficient on-chip supply voltage conversion and regulationCHANG LELAND·Filed 2012·Granted Sep 1, 2015·3 cites·25 claims
- 1479US8686506B2High performance devices and high density devices on single chipCHANG LELAND·Filed 2012·Granted Apr 1, 2014·4 cites·9 claims
- 1578US8531871B28-transistor SRAM cell design with Schottky diodesCHANG LELAND·Filed 2012·Granted Sep 10, 2013·6 cites·20 claims
- 1677US8338239B2High performance devices and high density devices on single chipCHANG LELAND·Filed 2010·Granted Dec 25, 2012·4 cites·10 claims
- 1772US8597991B2Embedded silicon germanium n-type filed effect transistor for reduced floating body effectCHANG LELAND·Filed 2012·Granted Dec 3, 2013·2 cites·7 claims
- 1870US8555119B2Test structure for characterizing multi-port static random access memory and register file arraysCHANG LELAND·Filed 2012·Granted Oct 8, 2013·3 cites·9 claims
- 1970US8526228B28-transistor SRAM cell design with outer pass-gate diodesCHANG LELAND·Filed 2012·Granted Sep 3, 2013·4 cites·20 claims
- 2068US8822295B2Low extension dose implants in SRAM fabricationCHANG LELAND·Filed 2012·Granted Sep 2, 2014·2 cites·12 claims
- 2166US8502325B2Metal high-K transistor having silicon sidewalls for reduced parasitic capacitanceCHANG LELAND·Filed 2012·Granted Aug 6, 2013·1 cites·15 claims
- 2265US8619465B28-transistor SRAM cell design with inner pass-gate junction diodesCHANG LELAND·Filed 2012·Granted Dec 31, 2013·3 cites·20 claims
- 2364US8174841B2Adaptive interconnect structureCHANG LELAND·Filed 2009·Granted May 8, 2012·2 cites·25 claims
- 2463US8828800B2Method of forming adaptive interconnect structure having programmable contactsCHANG LELAND·Filed 2012·Granted Sep 9, 2014·1 cites·20 claims
- 2562US8835997B2Low extension dose implants in SRAM fabricationCHANG LELAND·Filed 2012·Granted Sep 16, 2014·1 cites·8 claims
- 2659US8247877B2Structure with reduced fringe capacitanceCHANG LELAND·Filed 2009·Granted Aug 21, 2012·1 cites·15 claims
- 2755US8159028B2Metal high dielectric constant transistor with reverse-T gateCHANG LELAND·Filed 2009·Granted Apr 17, 2012·0 cites·20 claims
- 2855US8138052B2Metal high dielectric constant transistor with reverse-T gateCHANG LELAND·Filed 2009·Granted Mar 20, 2012·0 cites·20 claims
- 2953US8741730B2Bi-directional self-aligned FET capacitorCHANG LELAND·Filed 2012·Granted Jun 3, 2014·0 cites·9 claims
- 3051US8232604B2Transistor with high-k dielectric sidewall spacerCHANG LELAND·Filed 2008·Granted Jul 31, 2012·0 cites·20 claims
- 3150US8753932B2Asymmetric silicon-on-insulator SRAM cellCHANG LELAND·Filed 2012·Granted Jun 17, 2014·0 cites·19 claims
- 3248US8536041B2Method for fabricating transistor with high-K dielectric sidewall spacerCHANG LELAND·Filed 2012·Granted Sep 17, 2013·0 cites·20 claims
- 3348US2012313174A1Method of making a mosfet having self-aligned silicided schottky body tie including intentional pull-down of an sti exposing sidewalls of a diffusion regionCHANG LELAND·Filed 2012·Application pending·0 cites
- 3448US2009072312A1Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOSCHANG LELAND·Filed 2007·Application pending·0 cites
- 3545US8605499B2Resonance nanoelectromechanical systemsCHANG LELAND·Filed 2011·Granted Dec 10, 2013·0 cites·14 claims
- 3642US8397183B2Generation of asymmetric circuit devicesCHANG LELAND·Filed 2010·Granted Mar 12, 2013·0 cites·25 claims
Join the waitlist — get patent alerts
Get an alert when CHANG LELAND files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →