Assignee
CHANG MARK S
US·3 granted patents·0 citations·filing 2000–2012
Top patents by PatentIndex Score
3 records- 0150US8507969B2Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2012·Granted Aug 13, 2013·0 cites·12 claims
- 0250US8329530B1Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2012·Granted Dec 11, 2012·0 cites·9 claims
- 0336US8183619B1Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2000·Granted May 22, 2012·0 cites·1 claims
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