Assignee
CHANG YUAN-SHUN
TW·3 granted patents·7 citations·filing 2011–2012
Top patents by PatentIndex Score
3 records- 0175US8890242B2Closed cell trenched power semiconductor structureCHANG YUAN-SHUN·Filed 2012·Granted Nov 18, 2014·5 cites·6 claims
- 0262US8421149B2Trench power MOSFET structure with high switching speed and fabrication method thereofCHANG YUAN-SHUN·Filed 2011·Granted Apr 16, 2013·2 cites·12 claims
- 0337US8916930B2Trenched power semiconductor device and fabrication method thereofCHANG YUAN-SHUN·Filed 2011·Granted Dec 23, 2014·0 cites·9 claims
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