Assignee
CHANGZHOU ZHONGMIN SEMI-TECH CO LTD
CN·3 granted patents·3 citations·filing 2016–2016
Top patents by PatentIndex Score
3 records- 0172US9478649B2Semiconductor deviceCHANGZHOU ZHONGMIN SEMI-TECH CO LTD·Filed 2016·Granted Oct 25, 2016·2 cites·20 claims
- 0262US9583605B2Method of forming a trench in a semiconductor deviceCHANGZHOU ZHONGMIN SEMI-TECH CO LTD·Filed 2016·Granted Feb 28, 2017·1 cites·11 claims
- 0347US9634131B2Insulated gate bipolar deviceCHANGZHOU ZHONGMIN SEMI-TECH CO LTD·Filed 2016·Granted Apr 25, 2017·0 cites·11 claims
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