Assignee
CHAPARALA PRASAD
US·2 granted patents·0 citations·filing 2009–2011
Top patents by PatentIndex Score
2 records- 0149US8673720B2Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profileCHAPARALA PRASAD·Filed 2009·Granted Mar 18, 2014·0 cites·16 claims
- 0242US8253208B1Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profileCHAPARALA PRASAD·Filed 2011·Granted Aug 28, 2012·0 cites·26 claims
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