Assignee

CHARTERED SEMICONDUCTION MANUF

SG·1 granted patent·25 citations·filing 1996–1996

Technology mixH10D1 H10P1

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0160US5858832AMethod for forming a high areal capacitance planar capacitorCHARTERED SEMICONDUCTION MANUF·Filed 1996·Granted Jan 12, 1999·25 cites·15 claims

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