Assignee
CHEN HUAJIE
US·4 granted patents·4 citations·filing 2007–2012
Top patents by PatentIndex Score
4 records- 0175US8168489B2High performance stress-enhanced MOSFETS using Si:C and SiGe epitaxial source/drain and method of manufactureCHEN HUAJIE·Filed 2007·Granted May 1, 2012·3 cites·17 claims
- 0265US8901566B2High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufactureCHEN HUAJIE·Filed 2007·Granted Dec 2, 2014·1 cites·17 claims
- 0356US8067805B2Ultra shallow junction formation by epitaxial interface limited diffusionCHEN HUAJIE·Filed 2008·Granted Nov 29, 2011·0 cites·13 claims
- 0455US9023698B2High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufactureCHEN HUAJIE·Filed 2012·Granted May 5, 2015·0 cites·20 claims
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