Assignee
CHEN QUFEI
US·3 granted patents·15 citations·filing 2008–2011
Top patents by PatentIndex Score
3 records- 0190US9431550B2Trench polysilicon diodeCHEN QUFEI·Filed 2011·Granted Aug 30, 2016·9 cites·13 claims
- 0271US9484451B2MOSFET active area and edge termination area charge balanceCHEN QUFEI·Filed 2008·Granted Nov 1, 2016·4 cites·15 claims
- 0366US8072013B1Trench polysilicon diodeCHEN QUFEI·Filed 2009·Granted Dec 6, 2011·2 cites·16 claims
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