Assignee
CHENG KANGGUO
US·137 granted patents·29 pending applications·1,187 citations·filing 2006–2012
Top patents by PatentIndex Score
166 records- 0198US8546209B1Replacement metal gate processing with reduced interlevel dielectric layer etch rateCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·35 cites·20 claims
- 0298US8420459B1Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2011·Granted Apr 16, 2013·67 cites·20 claims
- 0397US8604539B2Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2012·Granted Dec 10, 2013·18 cites·20 claims
- 0497US8581320B1MOS capacitors with a finfet processCHENG KANGGUO·Filed 2012·Granted Nov 12, 2013·28 cites·20 claims
- 0597US8338260B2Raised source/drain structure for enhanced strain coupling from stress linerCHENG KANGGUO·Filed 2010·Granted Dec 25, 2012·25 cites·6 claims
- 0697US8207038B2Stressed Fin-FET devices with low contact resistanceCHENG KANGGUO·Filed 2010·Granted Jun 26, 2012·29 cites·9 claims
- 0796US8530974B2CMOS structure having multiple threshold voltage devicesCHENG KANGGUO·Filed 2012·Granted Sep 10, 2013·25 cites·5 claims
- 0896US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 0996US8110862B2Semiconductor structure including trench capacitor and trench resistorCHENG KANGGUO·Filed 2009·Granted Feb 7, 2012·39 cites·14 claims
- 1096US8105901B2Method for double pattern densityCHENG KANGGUO·Filed 2009·Granted Jan 31, 2012·37 cites·20 claims
- 1195US8932918B2FinFET with self-aligned punchthrough stopperCHENG KANGGUO·Filed 2012·Granted Jan 13, 2015·17 cites·20 claims
- 1295US8803233B2Junctionless transistorCHENG KANGGUO·Filed 2011·Granted Aug 12, 2014·17 cites·20 claims
- 1395US8697522B2Bulk finFET with uniform height and bottom isolationCHENG KANGGUO·Filed 2011·Granted Apr 15, 2014·22 cites·16 claims
- 1495US8399938B2Stressed Fin-FET devices with low contact resistanceCHENG KANGGUO·Filed 2012·Granted Mar 19, 2013·19 cites·9 claims
- 1595US8222100B2CMOS circuit with low-k spacer and stress linerCHENG KANGGUO·Filed 2010·Granted Jul 17, 2012·22 cites·19 claims
- 1695US8169024B2Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantationCHENG KANGGUO·Filed 2009·Granted May 1, 2012·33 cites·13 claims
- 1794US8748258B2Method and structure for forming on-chip high quality capacitors with ETSOI transistorsCHENG KANGGUO·Filed 2011·Granted Jun 10, 2014·15 cites·15 claims
- 1894US8741701B2Fin structure formation including partial spacer removalCHENG KANGGUO·Filed 2012·Granted Jun 3, 2014·15 cites·12 claims
- 1994US8742508B2Three dimensional FET devices having different device widthsCHENG KANGGUO·Filed 2011·Granted Jun 3, 2014·16 cites·12 claims
- 2094US8709890B2Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contactsCHENG KANGGUO·Filed 2011·Granted Apr 29, 2014·19 cites·20 claims
- 2194US8679906B2Asymmetric multi-gated transistor and method for formingCHENG KANGGUO·Filed 2009·Granted Mar 25, 2014·27 cites·19 claims
- 2294US8653596B2Integrated circuit including DRAM and SRAM/logicCHENG KANGGUO·Filed 2012·Granted Feb 18, 2014·16 cites·17 claims
- 2394US8617968B1Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs)CHENG KANGGUO·Filed 2012·Granted Dec 31, 2013·18 cites·20 claims
- 2494US8525292B2SOI device with DTI and STICHENG KANGGUO·Filed 2011·Granted Sep 3, 2013·16 cites·7 claims
- 2594US8471296B2FinFET fuse with enhanced current crowdingCHENG KANGGUO·Filed 2011·Granted Jun 25, 2013·20 cites·24 claims
- 2694US8394710B2Semiconductor devices fabricated by doped material layer as dopant sourceCHENG KANGGUO·Filed 2010·Granted Mar 12, 2013·15 cites·12 claims
- 2794US8309447B2Method for integrating multiple threshold voltage devices for CMOSCHENG KANGGUO·Filed 2010·Granted Nov 13, 2012·21 cites·27 claims
- 2894US8263446B2Asymmetric FinFET devicesCHENG KANGGUO·Filed 2010·Granted Sep 11, 2012·17 cites·11 claims
- 2993US9087741B2CMOS with dual raised source and drain for NMOS and PMOSCHENG KANGGUO·Filed 2011·Granted Jul 21, 2015·11 cites·2 claims
- 3093US8816436B2Method and structure for forming fin resistorsCHENG KANGGUO·Filed 2012·Granted Aug 26, 2014·16 cites·8 claims
- 3193US8574970B2Method of forming an extremely thin semiconductor insulator (ETSOI) FET having a stair-shaped raised source/drainCHENG KANGGUO·Filed 2010·Granted Nov 5, 2013·16 cites·9 claims
- 3293US8569159B2CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabricationCHENG KANGGUO·Filed 2012·Granted Oct 29, 2013·13 cites·18 claims
- 3392US9034703B2Self aligned contact with improved robustnessCHENG KANGGUO·Filed 2012·Granted May 19, 2015·13 cites·20 claims
- 3492US8853781B2Rare-earth oxide isolated semiconductor finCHENG KANGGUO·Filed 2011·Granted Oct 7, 2014·10 cites·20 claims
- 3592US8492241B2Method for simultaneously forming a through silicon via and a deep trench structureCHENG KANGGUO·Filed 2010·Granted Jul 23, 2013·12 cites·20 claims
- 3692US8450178B2Borderless contacts for semiconductor devicesCHENG KANGGUO·Filed 2012·Granted May 28, 2013·10 cites·10 claims
- 3792US8293615B2Self-aligned dual depth isolation and method of fabricationCHENG KANGGUO·Filed 2011·Granted Oct 23, 2012·11 cites·15 claims
- 3892US8084309B2Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single maskCHENG KANGGUO·Filed 2009·Granted Dec 27, 2011·23 cites·17 claims
- 3991US9105577B2MOSFET with work function adjusted metal backgateCHENG KANGGUO·Filed 2012·Granted Aug 11, 2015·9 cites·6 claims
- 4091US8546203B1Semiconductor structure having NFET extension last implantsCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·14 cites·23 claims
- 4191US8138543B2Hybrid FinFET/planar SOI FETsCHENG KANGGUO·Filed 2009·Granted Mar 20, 2012·21 cites·16 claims
- 4290US9034701B2Semiconductor device with a low-k spacer and method of forming the sameCHENG KANGGUO·Filed 2012·Granted May 19, 2015·9 cites·9 claims
- 4390US8962423B2Multilayer MIM capacitorCHENG KANGGUO·Filed 2012·Granted Feb 24, 2015·8 cites·11 claims
- 4490US8889564B2Suspended nanowire structureCHENG KANGGUO·Filed 2012·Granted Nov 18, 2014·8 cites·10 claims
- 4590US8691650B2MOSFET with recessed channel film and abrupt junctionsCHENG KANGGUO·Filed 2011·Granted Apr 8, 2014·8 cites·8 claims
- 4690US8530971B2Borderless contacts for semiconductor devicesCHENG KANGGUO·Filed 2009·Granted Sep 10, 2013·14 cites·10 claims
- 4790US8435846B2Semiconductor devices with raised extensionsCHENG KANGGUO·Filed 2011·Granted May 7, 2013·9 cites·8 claims
- 4890US8324036B2Device having and method for forming fins with multiple widths for an integrated circuitCHENG KANGGUO·Filed 2009·Granted Dec 4, 2012·12 cites·24 claims
- 4989US9048339B2Deep trench capacitorCHENG KANGGUO·Filed 2012·Granted Jun 2, 2015·9 cites·14 claims
- 5089US8673708B2Replacement gate ETSOI with sharp junctionCHENG KANGGUO·Filed 2012·Granted Mar 18, 2014·8 cites·10 claims
Showing the top 50 of 166 patent records by PatentIndex Score.
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