Assignee
CHUANG HAK-LAY
SG·9 granted patents·48 citations·filing 2011–2012
Top patents by PatentIndex Score
9 records- 0194US8742492B2Device with a vertical gate structureCHUANG HAK-LAY·Filed 2012·Granted Jun 3, 2014·19 cites·19 claims
- 0290US8703595B2N/P boundary effect reduction for metal gate transistorsCHUANG HAK-LAY·Filed 2011·Granted Apr 22, 2014·9 cites·20 claims
- 0385US8546227B2Contact for high-K metal gate deviceCHUANG HAK-LAY·Filed 2011·Granted Oct 1, 2013·7 cites·13 claims
- 0481US8592945B2Large dimension device and method of manufacturing same in gate last processCHUANG HAK-LAY·Filed 2011·Granted Nov 26, 2013·5 cites·20 claims
- 0578US8691673B2Semiconductor structure with suppressed STI dishing effect at resistor regionCHUANG HAK-LAY·Filed 2011·Granted Apr 8, 2014·4 cites·18 claims
- 0671US9177870B2Enhanced gate replacement process for high-K metal gate technologyCHUANG HAK-LAY·Filed 2011·Granted Nov 3, 2015·2 cites·20 claims
- 0762US8772114B2Metal gate semiconductor device and method of fabricating thereofCHUANG HAK-LAY·Filed 2012·Granted Jul 8, 2014·1 cites·20 claims
- 0861US9257347B2System and method for a field-effect transistor with a raised drain structureCHUANG HAK-LAY·Filed 2012·Granted Feb 9, 2016·1 cites·20 claims
- 0948US8635573B2Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structuresCHUANG HAK-LAY·Filed 2011·Granted Jan 21, 2014·0 cites·18 claims
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