Assignee
DEWEY GILBERT
US·13 granted patents·4 pending applications·142 citations·filing 2006–2016
Top patents by PatentIndex Score
17 records- 0198US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0295US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 0387US8390082B2Gate electrode having a capping layerDEWEY GILBERT·Filed 2011·Granted Mar 5, 2013·5 cites·14 claims
- 0486US8803255B2Gate electrode having a capping layerDEWEY GILBERT·Filed 2013·Granted Aug 12, 2014·4 cites·23 claims
- 0584US8748269B2Quantum-well-based semiconductor devicesDEWEY GILBERT·Filed 2013·Granted Jun 10, 2014·5 cites·11 claims
- 0684US8536621B2Quantum-well-based semiconductor devicesDEWEY GILBERT·Filed 2012·Granted Sep 17, 2013·5 cites·9 claims
- 0783US9653548B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2016·Granted May 16, 2017·2 cites·25 claims
- 0883US9018680B2Non-planar semiconductor device having active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2014·Granted Apr 28, 2015·4 cites·22 claims
- 0968US9748338B2Preventing isolation leakage in III-V devicesDEWEY GILBERT·Filed 2012·Granted Aug 29, 2017·2 cites·11 claims
- 1068US8227833B2Dual layer gate dielectrics for non-silicon semiconductor devicesDEWEY GILBERT·Filed 2009·Granted Jul 24, 2012·3 cites·20 claims
- 1166US8878363B2Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing sameDEWEY GILBERT·Filed 2009·Granted Nov 4, 2014·2 cites·17 claims
- 1257US9343574B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2015·Granted May 17, 2016·0 cites·17 claims
- 1355US8258543B2Quantum-well-based semiconductor devicesDEWEY GILBERT·Filed 2009·Granted Sep 4, 2012·0 cites·20 claims
- 1446US2009085082A1Controlled intermixing of hfo2 and zro2 dielectrics enabling higher dielectric constant and reduced gate leakageDEWEY GILBERT·Filed 2007·Application pending·0 cites
- 1542US2009085156A1Metal surface treatments for uniformly growing dielectric layersDEWEY GILBERT·Filed 2007·Application pending·0 cites
- 1639US2007262399A1Sealing spacer to reduce or eliminate lateral oxidation of a high-k gate dielectricDEWEY GILBERT·Filed 2006·Application pending·0 cites
- 1737US2012153352A1High indium content transistor channelsDEWEY GILBERT·Filed 2010·Application pending·0 cites
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