Assignee

EASLER TIMOTHY E

US·1 granted patent·0 citations·filing 2009–2009

Technology mixC01B1 C04B1 G21C1 Y02E1 Y10S1

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0154US8697024B2Method of forming a silicon carbide material, and structures including the materialEASLER TIMOTHY E·Filed 2009·Granted Apr 15, 2014·0 cites·17 claims

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