Assignee
ENDOH TETSUO
JP·5 granted patents·21 citations·filing 2004–2011
Top patents by PatentIndex Score
5 records- 0183US8258571B2MOS semiconductor memory device having charge storage region formed from stack of insulating filmsENDOH TETSUO·Filed 2008·Granted Sep 4, 2012·11 cites·19 claims
- 0270US8969944B2Semiconductor integrated circuit and method of producing the sameENDOH TETSUO·Filed 2011·Granted Mar 3, 2015·3 cites·12 claims
- 0358US7315059B2Semiconductor memory device and manufacturing method for the sameENDOH TETSUO·Filed 2004·Granted Jan 1, 2008·7 cites·11 claims
- 0449US8518828B2Semiconductor device fabrication methodENDOH TETSUO·Filed 2009·Granted Aug 27, 2013·0 cites·12 claims
- 0546US8124484B2Forming a MOS memory device having a dielectric film laminate as a charge accumulation regionENDOH TETSUO·Filed 2009·Granted Feb 28, 2012·0 cites·10 claims
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