Assignee
ENICKS DARWIN G
US·2 granted patents·4 pending applications·6 citations·filing 2005–2010
Top patents by PatentIndex Score
6 records- 0172US8530934B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoENICKS DARWIN G·Filed 2010·Granted Sep 10, 2013·3 cites·15 claims
- 0268US8173526B2Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulatorENICKS DARWIN G·Filed 2009·Granted May 8, 2012·3 cites·22 claims
- 0338US2007148890A1Oxygen enhanced metastable silicon germanium film layerENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 0438US2007102834A1Strain-compensated metastable compound base heterojunction bipolar transistorENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 0535US2006292809A1Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injectionENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 0634US2007102729A1Method and system for providing a heterojunction bipolar transistor having SiGe extensionsENICKS DARWIN G·Filed 2005·Application pending·0 cites
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