Assignee
ENYA YOHEI
JP·7 granted patents·1 pending application·8 citations·filing 2009–2012
Top patents by PatentIndex Score
8 records- 0174US8476615B2GaN-based semiconductor light emitting device and the method for making the sameENYA YOHEI·Filed 2011·Granted Jul 2, 2013·3 cites·18 claims
- 0270US8207544B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2010·Granted Jun 26, 2012·2 cites·24 claims
- 0368US8483251B2Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diodeENYA YOHEI·Filed 2011·Granted Jul 9, 2013·2 cites·24 claims
- 0461US8809868B2Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrateENYA YOHEI·Filed 2011·Granted Aug 19, 2014·1 cites·22 claims
- 0550US8487327B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2012·Granted Jul 16, 2013·0 cites·25 claims
- 0648US8173458B2Method for forming quantum well structure and method for manufacturing semiconductor light emitting elementENYA YOHEI·Filed 2009·Granted May 8, 2012·0 cites·20 claims
- 0740US2012327967A1Group iii nitride semiconductor laser device, epitaxial substrate, method of fabricating group iii nitride semiconductor laser deviceENYA YOHEI·Filed 2012·Application pending·0 cites
- 0838US8228963B2Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial waferENYA YOHEI·Filed 2010·Granted Jul 24, 2012·0 cites·20 claims
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