Assignee
FANG SHENQING
US·12 granted patents·22 citations·filing 2006–2012
Top patents by PatentIndex Score
12 records- 0181US8669597B2Memory device interconnects and method of manufacturingFANG SHENQING·Filed 2008·Granted Mar 11, 2014·6 cites·19 claims
- 0274US8441063B2Memory with extended charge trapping layerFANG SHENQING·Filed 2010·Granted May 14, 2013·4 cites·12 claims
- 0373US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 0468US8441041B2Memory device peripheral interconnectsFANG SHENQING·Filed 2010·Granted May 14, 2013·2 cites·11 claims
- 0567US8551858B2Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memoryFANG SHENQING·Filed 2010·Granted Oct 8, 2013·2 cites·11 claims
- 0661US9240418B2Wordline resistance reduction method and structure in an integrated circuit memory deviceFANG SHENQING·Filed 2010·Granted Jan 19, 2016·1 cites·13 claims
- 0759US8487373B2SONOS memory cells having non-uniform tunnel oxide and methods for fabricating sameFANG SHENQING·Filed 2009·Granted Jul 16, 2013·1 cites·14 claims
- 0858US8076199B2Method and device employing polysilicon scalingFANG SHENQING·Filed 2009·Granted Dec 13, 2011·1 cites·14 claims
- 0948US8637918B2Method and device employing polysilicon scalingFANG SHENQING·Filed 2011·Granted Jan 28, 2014·0 cites·10 claims
- 1047US8202779B2Methods for forming a memory cell having a top oxide spacerFANG SHENQING·Filed 2010·Granted Jun 19, 2012·0 cites·7 claims
- 1143US9564331B2Apparatus and method for rounded ONO formation in a flash memory deviceFANG SHENQING·Filed 2012·Granted Feb 7, 2017·0 cites·7 claims
- 1238US9412598B2Edge rounded field effect transistors and methods of manufacturingFANG SHENQING·Filed 2010·Granted Aug 9, 2016·0 cites·3 claims
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