Assignee
FANG SUNFEI
US·3 granted patents·5 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0167US8173531B2Structure and method to improve threshold voltage of MOSFETS including a high K dielectricFANG SUNFEI·Filed 2009·Granted May 8, 2012·3 cites·19 claims
- 0265US8679938B2Shallow trench isolation for device including deep trench capacitorsFANG SUNFEI·Filed 2012·Granted Mar 25, 2014·2 cites·20 claims
- 0348US8513085B2Structure and method to improve threshold voltage of MOSFETs including a high k dielectricFANG SUNFEI·Filed 2012·Granted Aug 20, 2013·0 cites·20 claims
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