Assignee

FARRELL JR ROBERT M

US·1 granted patent·2 citations·filing 2010–2010

Technology mixB82Y1 C30B1 H01S1 H10D1 H10F1 H10H1

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0171US8686466B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesFARRELL JR ROBERT M·Filed 2010·Granted Apr 1, 2014·2 cites·26 claims

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