Assignee
FASL LLC
US·28 granted patents·788 citations·filing 2000–2006
Top patents by PatentIndex Score
28 records- 0196US6912163B2Memory device having high work function gate and method of erasing sameFASL LLC·Filed 2003·Granted Jun 28, 2005·168 cites·29 claims
- 0292US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 0392US6949433B1Method of formation of semiconductor resistant to hot carrier injection stressFASL LLC·Filed 2003·Granted Sep 27, 2005·103 cites·18 claims
- 0491US6803275B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2002·Granted Oct 12, 2004·46 cites·19 claims
- 0590US6949481B1Process for fabrication of spacer layer with reduced hydrogen content in semiconductor deviceFASL LLC·Filed 2003·Granted Sep 27, 2005·50 cites·20 claims
- 0689US6958511B1Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogenFASL LLC·Filed 2003·Granted Oct 25, 2005·52 cites·19 claims
- 0787US6791880B1Non-volatile memory read circuit with end of life simulationFASL LLC·Filed 2003·Granted Sep 14, 2004·44 cites·19 claims
- 0886US6707078B1Dummy wordline for erase and bitline leakageFASL LLC·Filed 2002·Granted Mar 16, 2004·39 cites·20 claims
- 0985US7067377B1Recessed channel with separated ONO memory deviceFASL LLC·Filed 2004·Granted Jun 27, 2006·30 cites·18 claims
- 1085US6969886B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2004·Granted Nov 29, 2005·28 cites·20 claims
- 1185US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 1283US6955965B1Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor deviceFASL LLC·Filed 2003·Granted Oct 18, 2005·26 cites·20 claims
- 1378US7009887B1Method of determining voltage compensation for flash memory devicesFASL LLC·Filed 2004·Granted Mar 7, 2006·23 cites·12 claims
- 1473US6809033B1Innovative method of hard mask removalFASL LLC·Filed 2001·Granted Oct 26, 2004·15 cites·23 claims
- 1569US7394125B1Recessed channel with separated ONO memory deviceFASL LLC·Filed 2006·Granted Jul 1, 2008·3 cites·6 claims
- 1669US6944057B1Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage referenceFASL LLC·Filed 2003·Granted Sep 13, 2005·16 cites·16 claims
- 1769US6803265B1Liner for semiconductor memories and manufacturing method thereforFASL LLC·Filed 2002·Granted Oct 12, 2004·15 cites·20 claims
- 1863US6977195B1Test structure for characterizing junction leakage currentFASL LLC·Filed 2004·Granted Dec 20, 2005·8 cites·20 claims
- 1958US7019366B1Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistanceFASL LLC·Filed 2004·Granted Mar 28, 2006·8 cites·13 claims
- 2056US6813735B1I/O based column redundancy for virtual ground with 2-bit cell flash memoryFASL LLC·Filed 2000·Granted Nov 2, 2004·9 cites·25 claims
- 2149US6730564B1Salicided gate for virtual ground arraysFASL LLC·Filed 2002·Granted May 4, 2004·3 cites·19 claims
- 2247US7098546B1Alignment marks with salicided spacers between bitlines for alignment signal improvementFASL LLC·Filed 2004·Granted Aug 29, 2006·2 cites·20 claims
- 2347US6979577B2Method and apparatus for manufacturing semiconductor deviceFASL LLC·Filed 2003·Granted Dec 27, 2005·2 cites·12 claims
- 2440US7074677B1Memory with improved charge-trapping dielectric layerFASL LLC·Filed 2002·Granted Jul 11, 2006·3 cites·6 claims
- 2538US6984563B1Floating gate semiconductor component and method of manufactureFASL LLC·Filed 2004·Granted Jan 10, 2006·1 cites·21 claims
- 2638US6859393B1Ground structure for page read and page write for flash memoryFASL LLC·Filed 2002·Granted Feb 22, 2005·1 cites·8 claims
- 2736US6873022B2Semiconductor device and method for manufacturing the sameFASL LLC·Filed 2003·Granted Mar 29, 2005·0 cites·28 claims
- 2831US7037780B2Semiconductor memory device and method of fabricating the sameFASL LLC·Filed 2003·Granted May 2, 2006·0 cites·16 claims
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